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  2. Gallium arsenide - Wikipedia

    en.wikipedia.org/wiki/Gallium_arsenide

    Gallium arsenide ( GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.

  3. List of semiconductor materials - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).

  4. Wide-bandgap semiconductor - Wikipedia

    en.wikipedia.org/wiki/Wide-bandgap_semiconductor

    Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. [ 1][ 2 ...

  5. Germanium - Wikipedia

    en.wikipedia.org/wiki/Germanium

    Germanium is a chemical element; it has symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid (more rarely considered a metal) in the carbon group that is chemically similar to its group neighbors silicon and tin. Like silicon, germanium naturally reacts and forms ...

  6. Direct and indirect band gaps - Wikipedia

    en.wikipedia.org/wiki/Direct_and_indirect_band_gaps

    Direct and indirect band gaps. In semiconductor physics, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone.

  7. Gallium phosphide - Wikipedia

    en.wikipedia.org/wiki/Gallium_phosphide

    Gallium phosphide ( GaP ), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption.

  8. Silver - Wikipedia

    en.wikipedia.org/wiki/Silver

    Silver is a chemical element; it has symbol Ag (from Latin argentum 'silver', derived from Proto-Indo-European *h₂erǵ 'shiny, white') and atomic number 47. A soft, white, lustrous transition metal, it exhibits the highest electrical conductivity, thermal conductivity, and reflectivity of any metal. [ 8]

  9. GTPase-activating protein - Wikipedia

    en.wikipedia.org/wiki/GTPase-activating_protein

    GTPase-activating proteins or GTPase-accelerating proteins ( GAPs) are a family of regulatory proteins whose members can bind to activated G proteins and stimulate their GTPase activity, with the result of terminating the signaling event. [ 1] GAPs are also known as RGS protein, or RGS proteins, [ 2] and these proteins are crucial in ...